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Mckeown Walker S, Boselli M, Martínez EA, Gariglio S, Bruno FY, Baumberger F.
Advanced electronic materials. 2022;:2101376
We have measured the electronic structure of the two-dimensional electron system (2DES) found at the Al/SrTiO3 (Al/STO) and LaAlO3/SrTiO3 (LAO/STO) interfaces by means of laser angle resolved photoemission spectroscopy, taking advantage of the large photoelectron escape depth at low photon energy…
Archive ouverte UNIGECappelli E, Hampel A, Chikina A, Guedes EB, Gatti G, Hunter AS, Issing J, Biskup N, Varela M, Dreyer CE, Tamai A, Georges A, Bruno FY, Radovic M, Baumberger F.
Physical review materials. 2022;6:075002
We use angle-resolved photoemission to map the Fermi surface and quasiparticle dispersion of bulk-like thin films of SrMoO$_3$ grown by pulsed laser deposition. The electronic self-energy deduced from our data reveals weak to moderate correlations in SrMoO$_3$, consistent with our observation of…
Archive ouverte UNIGECaputo M, Jandke J, Cappelli E, Chaluvadi SK, Bonini Guedes E, Naamneh M, Vinai G, Fujii J, Torelli P, Vobornik I, Goldoni A, Orgiani P, Baumberger F, Radovic M, Panaccione G.
Applied surface science. 2022;574:151608
Archive ouverte UNIGEPreprints
Ekahana SA, Soh Y, Tamai A, Gosálbez-Martínez D, Yao M, Hunter AS, Fan W, Wang Y, Li J, Kleibert A, Vaz CAF, Ma J, Xiong Y, Yazyev OV, Baumberger F, Shi M, Aeppli G.
2022.
One material containing kagome bilayers and featuring both exceptional magnetism and electron transport is the ferromagnetic metal Fe3Sn2. Notwithstanding the widespread interest in Fe3Sn2, crystal twinning, difficulties in distinguishing surface from bulk states, and a large unit cell have until…
Archive ouverte UNIGEGatti G, Issing J, Rademaker L, Margot F, Jong TA de, Molen SJ van der, Teyssier J, Kim TK, Watson MD, Cacho C, Dudin P, Avila J, Edwards KC, Paruch P, Ubrig N, Gutierrez Lezama I, Morpurgo A, Tamai A, Baumberger F.
2022.
The recent observation of correlated phases in transition metal dichalcogenide moir\'e systems at integer and fractional filling promises new insight into metal-insulator transitions and the unusual states of matter that can emerge near such transitions. Here, we combine real- and…
Archive ouverte UNIGEDoctoral Thesis
Margot F.
2D semiconducting materials represent an interesting opportunity to pursue the desired scaling of the transistors for the electronic industry. Black phosphorus (BP), a direct gap semiconductor with thickness dependent anisotropic properties, is a prominent candidate to replace silicon (Si) in this…
Archive ouverte UNIGE